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Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: onsemi MUN5312DW1T1G
Transistor Type: 1 NPN - Pre-Biased,1 PNP - Pre-Biased
Collector Current (Ic): 100mA
Power Dissipation (Pd): 187mW
DC Current Gain (hFE@Ic,Vce): 60@5mA,10V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@300uA,10mA
Package: SOT-363
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: MUN53
detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363